PC4-21300 – DeviceLog.com https://www.devicelog.com/cy/ device, part, sbec Wed, 06 Nov 2019 11:16:37 +0000 cy hourly 1 https://wordpress.org/?v=6.6.2 Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-cy SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

Enw Cynnyrch Samsung DDR4 SDRAM 16GB 2R × 8 PC4-21300
(PC4-2666V-UB1-11)
Rhif Rhan M378A2K43CB1-CTD
(C-marw)
Gwneuthurwr Samsung Electronics
Gwlad Gweithgynhyrchu Tsieina
Adeiladu Blwyddyn/Wythnos 2019 / 06
Math DIMM UDIMMs
Cynhwysedd Data 16GB
Cyfradd Data
(Lled Band Uchaf)		 2666.67 MT/s
(21333.33 MB/s)
Amseru Cof
(CL – tRCD – tRP – ar ol – tRC)		 19-19-19-43-61
Nodweddion 288pin, Unbuffer Di-ECC DDR4 SDRAM DIMM
Darnau Data x64
Banciau Modiwlau Mewnol 16 Banciau (4 Grwpiau Banc)
Rhengoedd 2 (Rheng Ddeuol)
Cyfansoddi Cydran (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Pecyn 78FBGA gyda Di-blwm & Halogen-Rhydd
(RoHS cydymffurfio)
Uchder 31.25 mm
Foltedd VDD 1.2 V± 0.06 V
Achos Gweithredu Amrediad Tymheredd Cyfnod Adnewyddu Cyfartalog 7.8us yn is na TACHOS 85℃,
3.9ni ar 85 ℃ < TACHOS ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-cy SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

Enw Cynnyrch Samsung DDR4 SDRAM 8GB 1R × 8 PC4-21300
(PC4-2666V-UA2-11)
Rhif Rhan M378A1K43CB2-CTD
(C-marw)
Gwneuthurwr Samsung Electronics
Gwlad Gweithgynhyrchu Tsieina
Adeiladu Blwyddyn/Wythnos 2018 / 28
Math DIMM UDIMMs
Cynhwysedd Data 8GB
Cyfradd Data
(Lled Band Uchaf)		 2666.67 MT/s
(21333.33 MB/s)
Amseru Cof
(CL – tRCD – tRP – ar ol – tRC)		 19-19-19-43-61
Nodweddion 288pin, Unbuffer Di-ECC DDR4 SDRAM DIMM
Darnau Data x64
Banciau Modiwlau Mewnol 16 Banciau (4 Grwpiau Banc)
Rhengoedd 1 (Rheng Sengl)
Cyfansoddi Cydran (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Pecyn 78FBGA gyda Di-blwm & Halogen-Rhydd
(RoHS cydymffurfio)
Uchder 30mm
Foltedd VDD 1.2V ± 0.06V
Achos Gweithredu Amrediad Tymheredd Cyfnod Adnewyddu Cyfartalog 7.8us yn is na TACHOS 85℃,
3.9ni ar 85 ℃ < TACHOS ≤ 95 ℃

 

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