Cof – DeviceLog.com https://www.devicelog.com/cy/ device, part, sbec Thu, 01 Dec 2022 23:32:55 +0000 cy hourly 1 https://wordpress.org/?v=6.6.2 Samsung 16MB SDRAM DIMM PC66 (KMM366S203CTL-G0) https://www.devicelog.com/cy/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/ https://www.devicelog.com/cy/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/#respond Wed, 20 Jul 2022 09:33:56 +0000 https://www.devicelog.com/?p=1358-cy Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0)Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0) backside

  • Enw Cynnyrch : Samsung 16MB SDRAM 16MB PC66
  • Rhan rhif : KMM366S203CTL-G0
  • Gwneuthurwr : Mae Samsung Electronics Co., Cyf. (SEC)
  • Gwlad gweithgynhyrchu : De Corea
  • Adeiladu blwyddyn/wythnos : 1998/09
  • Cynhwysedd Data : 16MB
  • Cyflymder cloc : 66Mhz (PC66)
  • Nodweddion : 168 pin, SDRAM DIMM heb ei glustogi
  • Cyfansoddiad sglodion data : [KM48S2020CT-G10] × 8 sglodion
    (2M × 64 did)
  • Gwybodaeth Un Sglodion
    • KM48S2020CT-G10 (UQK218EM neu UQL004DD)
    • Math IC Cof : DRAM cydamserol
    • Gallu : 2M x 8did
    • Amser Mynediad-Max : 7 ns
    • Hyd Byrstio Rhyngddalennog: 1, 2, 4, 8
    • Amlder Cloc-Max (fCLK) : 100 MHz
    • 44 pin
    • Adeiladu blwyddyn/wythnos : 1998/07
  • VDD : 3.3V
  • ETC : 366S203BTL, OC1055-00, SMB2 94V-0
]]> https://www.devicelog.com/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/feed/ 0 LG Semicon 16MB SDRAM DIMM PC66 (GMM2642233BLTG-10K 7101S) https://www.devicelog.com/cy/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/ https://www.devicelog.com/cy/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/#respond Fri, 15 Jul 2022 08:54:09 +0000 https://www.devicelog.com/?p=1350-cy LG Semicon 9703 2Mx64 SDRAM GMM2642233BLTG-10K 7101SLG Semicon 9703 2Mx64 SDRAM 168pin DIMM

  • Enw Cynnyrch : LG SDRAM 16MB PC66
  • Rhan rhif : GMM2642233BLTG-10K 7101S
  • Gwneuthurwr : Mae LG Semicon Co., Ltd.
  • Gwlad gweithgynhyrchu : De Corea
  • Adeiladu blwyddyn/wythnos : 1997/03
  • Cynhwysedd Data : 16MB
  • Cyflymder cloc : 66Mhz (PC66)
  • Nodweddion : 168pin, SDRAM DIMM heb ei glustogi
  • Cyfansoddiad sglodion data : [GM72V16821BT10K] × 8 sglodion
    (2M × 64 did)
  • Cynhwysedd Un Sglodion : 2M x 8did
  • VDD : 3.3V
]]> https://www.devicelog.com/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/feed/ 0 LG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) https://www.devicelog.com/cy/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/ https://www.devicelog.com/cy/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/#comments Mon, 11 Jul 2022 15:05:31 +0000 https://www.devicelog.com/?p=1336-cy LGS GM71C17400CJ6 16MB EDO-DRAM SIMM frontsideLGS GM71C17400CJ6 16MB EDO-DRAM SIMM backside

  • Gwneuthurwr : Mae LG Semicon Co., Ltd.
  • Gwlad gweithgynhyrchu : De Corea
  • Rhif Rhan : ?
  • Ffactor Ffurf : SIMM
  • Nodweddion : 72pin, EDO DRAM, Anghyfartaledd
  • Gallu Cof : 16MB
  • Lled band : 32bit
  • Cyflymder : 60ns(tRAC)
  • foltedd : 5V
  • Cyfansoddiad Sglodion : GM71C17400CJ6 × 8
  • Blwyddyn/Wythnos Adeiladu Sglodion : 1998/27
  • Cynhwysedd Un Sglodion : 4M x 4bit
  • Etc : Addonics®, SD816
]]> https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/feed/ 1 Cof EK 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/cy/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/cy/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311-cy EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

Enw Cynnyrch Cof EK 2GB DDR SO-DIMM PC2-5300 CL5
Rhif Rhan EKM256S74BP8-E6
Gwneuthurwr EK Cof
Gwlad Gweithgynhyrchu Taiwan
Blwyddyn/Wythnos Adeiladu Sglodion 2008/27
Math Modiwl Cof DDR2 SO-DIMM 200 pin
Cynhwysedd Data 2GB
Cyflymder y Cloc 667Mhz (PC2-5300)
Amseru Cof CL=5, tRCD=5, tRP=5
Nodweddion 200pin
Heb glustog
Heb fod yn ECC
Llyfr nodiadau(Gliniadur) Cof
Darnau Data x64
Gwybodaeth Sglodion Data EK20908A8A-3EG
20827
XCG248-UA3G
Pecyn FBGA (BGA tra cain)
Foltedd VDD 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233-cy SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

Enw Cynnyrch Samsung DDR4 SDRAM 16GB 2R × 8 PC4-21300
(PC4-2666V-UB1-11)
Rhif Rhan M378A2K43CB1-CTD
(C-marw)
Gwneuthurwr Samsung Electronics
Gwlad Gweithgynhyrchu Tsieina
Adeiladu Blwyddyn/Wythnos 2019 / 06
Math DIMM UDIMMs
Cynhwysedd Data 16GB
Cyfradd Data
(Lled Band Uchaf)		 2666.67 MT/s
(21333.33 MB/s)
Amseru Cof
(CL – tRCD – tRP – ar ol – tRC)		 19-19-19-43-61
Nodweddion 288pin, Unbuffer Di-ECC DDR4 SDRAM DIMM
Darnau Data x64
Banciau Modiwlau Mewnol 16 Banciau (4 Grwpiau Banc)
Rhengoedd 2 (Rheng Ddeuol)
Cyfansoddi Cydran (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Pecyn 78FBGA gyda Di-blwm & Halogen-Rhydd
(RoHS cydymffurfio)
Uchder 31.25 mm
Foltedd VDD 1.2 V± 0.06 V
Achos Gweithredu Amrediad Tymheredd Cyfnod Adnewyddu Cyfartalog 7.8us yn is na TACHOS 85℃,
3.9ni ar 85 ℃ < TACHOS ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/cy/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215-cy SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

Enw Cynnyrch Samsung DDR4 SDRAM 8GB 1R × 8 PC4-21300
(PC4-2666V-UA2-11)
Rhif Rhan M378A1K43CB2-CTD
(C-marw)
Gwneuthurwr Samsung Electronics
Gwlad Gweithgynhyrchu Tsieina
Adeiladu Blwyddyn/Wythnos 2018 / 28
Math DIMM UDIMMs
Cynhwysedd Data 8GB
Cyfradd Data
(Lled Band Uchaf)		 2666.67 MT/s
(21333.33 MB/s)
Amseru Cof
(CL – tRCD – tRP – ar ol – tRC)		 19-19-19-43-61
Nodweddion 288pin, Unbuffer Di-ECC DDR4 SDRAM DIMM
Darnau Data x64
Banciau Modiwlau Mewnol 16 Banciau (4 Grwpiau Banc)
Rhengoedd 1 (Rheng Sengl)
Cyfansoddi Cydran (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Pecyn 78FBGA gyda Di-blwm & Halogen-Rhydd
(RoHS cydymffurfio)
Uchder 30mm
Foltedd VDD 1.2V ± 0.06V
Achos Gweithredu Amrediad Tymheredd Cyfnod Adnewyddu Cyfartalog 7.8us yn is na TACHOS 85℃,
3.9ni ar 85 ℃ < TACHOS ≤ 95 ℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0 Samsung 2GB DDR2 SDRAM DIMM 2Rx8 PC2-6400 (M378T5663QZ3-CF7) https://www.devicelog.com/cy/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/ https://www.devicelog.com/cy/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/#respond Sat, 04 Jun 2016 15:17:04 +0000 https://www.devicelog.com/?p=1116-cy Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)

Enw Cynnyrch Samsung DDR2 SDRAM 2GB 2R × 8 PC2-6400
Rhif Rhan M378T5663QZ3-CF7
Gwneuthurwr Samsung Electronics
Gwlad Gweithgynhyrchu Tsieina
Adeiladu Blwyddyn/Wythnos 2009/04, 2010/07
Math Modiwl Cof DIMM
Cynhwysedd Data 2GB
Cyflymder y Cloc 800Mhz (PC2-6400)
Amseru Cof CL=6, tRCD=6, tRP=6
Nodweddion 240pin, SDRAM DIMM heb fod yn ECC DDR2
Darnau Data x64
Banciau Modiwlau Mewnol 8
Rhengoedd 2
Cyfansoddiad Sglodion Data
(Dyfnder × Trefniadaeth did × pcs)		 128M × 8 × 16 darn
(K4T1G084QQ × 16pcs)
Pecyn 60FBGA gyda Di-blwm a Heb Halogen
(RoHS cydymffurfio)
Uchder 30mm
Foltedd VDD 1.8V±0.1V
Achos Gweithredu Amrediad Tymheredd 0°C ~ 95°C

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/feed/ 0 Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R×8, M378B1G73QH0-CK0) https://www.devicelog.com/cy/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/ https://www.devicelog.com/cy/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/#comments Fri, 20 Mar 2015 05:46:58 +0000 https://www.devicelog.com/?p=902-cy Samsung 8GB DDR3 SDRAM 2R×8 PC3-12800U-11-12-B1 M378B1G73QH0-CK0 1408

Enw Cynnyrch Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM
(2Rx8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0)
Gwneuthurwr Samsung Electronics
Gwlad gweithgynhyrchu Philipinaidd
Adeiladu blwyddyn/wythnos 2014/08
Cynhwysedd Data 8GB
Cyflymder cloc 1600Mhz (PC3-12800)
Amseru Cof CL=11, tRCD=11, tRP=11
Nodweddion 240pin, Unbuffer DIMM SDRAM nad yw'n ECC
Technoleg proses gynhyrchu 20, 30, 40nm
Darnau data x64
Banciau Modiwlau Mewnol 8
Rhengoedd 2
Cyfansoddiad sglodion data
(Dyfnder × Trefniadaeth did × pcs)		 512M×8 × 16 pcs
(K4B4G0846Q-HCK0 × 16 pcs)
Pecyn
78 FBGA gyda Di-blwm & Halogen-Rhydd
(RoHS cydymffurfio)
Uchder 30mm
Foltedd VDD 1.5V ± 0.075V
Achos Gweithredu Amrediad Tymheredd 0°C ~ 95°C

 

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/feed/ 4 Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM) https://www.devicelog.com/cy/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/ https://www.devicelog.com/cy/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/#respond Tue, 03 Mar 2015 08:45:43 +0000 https://www.devicelog.com/?p=814-cy Mae'r M368L6423DTM yn 32M bit x 64 Cyfradd Data Dwbl(DDR) Modiwl cof dwysedd uchel SDRAM yn seiliedig ar bumed genhedlaeth o 256Mb DDR SDRAM yn y drefn honno. Mae'r M368L6423DTM yn cynnwys un ar bymtheg CMOS 32M x 8 bit gyda 4banks Cyfradd Data Dwbl SDRAM yn 66pin TSOP-II(400mil) pecynnau wedi'u gosod ar swbstrad gwydr-epocsi 184pin. Mae pedwar cynhwysydd datgysylltu 0.1uF wedi'u gosod ar y bwrdd cylched printiedig yn gyfochrog ar gyfer pob SDRAM DDR. The M368L6423DTM Dual In-line Memory Module and is intended for mounting into 184pin edge connector sockets.

Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM) Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM)

Enw Cynnyrch Samsung DDR SDRAM PC2700 512MB DIMM
(PC2700U-25331B2, M368L6423DTM)
Gwneuthurwr Samsung Electronics
Gwlad gweithgynhyrchu Corea
Adeiladu blwyddyn/wythnos 2003/12
Cynhwysedd Data 512MB
Cyflymder cloc 166Mhz (PC2700, DDR333)
Amseru Cof CL=2.5
Nodweddion 184pin, DIMM, Unbuffer SDRAM DDR nad yw'n ECC
Maint 133.35mm × 31.75mm
Darnau data 64bit
Banciau Modiwlau Mewnol 4
Cyfansoddiad sglodion data K4H560838D-TCB3 × 16
(32M × 8bit × 16chips)
Pecyn TSOP-II
Foltedd VDD 2.5V ± 0.2V
Achos Gweithredu Amrediad Tymheredd 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/feed/ 0 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/cy/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/cy/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791-cy Rhyddhaodd Samsung Electronics fodiwlau DDR3 SDRAM gan ddefnyddio'r dechnoleg proses 30nm ym mis Gorffennaf 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Enw Cynnyrch Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-Dd2, M471B5273CH0-CH9)
Gwneuthurwr Samsung Electronics (SEC)
Gwlad gweithgynhyrchu Tsieina
Adeiladu blwyddyn/wythnos 2011/13
Cynhwysedd Data 4GB
Cyflymder cloc 1333Mhz (PC3-10600)
Amseru Cof CL=9, tRCD=9, tRP=9
Nodweddion 204pin, SODIMM, Unbuffer Di-ECC DDR3 SDRAM
Technoleg proses gynhyrchu 40nm
Darnau data x64
Banciau Modiwlau Mewnol 8
Rhengoedd 2
Cyfansoddiad sglodion data 256M x 8 * 16 pcs
Adolygu cydran 2Gb, C-marw
Pecyn 78 pel FBGA
Uchder 30mm
Foltedd VDD 1.5V
Achos Gweithredu Amrediad Tymheredd 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3