DRAM – DeviceLog.com https://www.devicelog.com device, part, spec Thu, 01 Dec 2022 23:32:55 +0000 en-US hourly 1 https://wordpress.org/?v=6.6.2 Samsung 16MB SDRAM DIMM PC66 (KMM366S203CTL-G0) https://www.devicelog.com/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/ https://www.devicelog.com/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/#respond Wed, 20 Jul 2022 09:33:56 +0000 https://www.devicelog.com/?p=1358 Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0)Samsung 16MB SDRAM PC66 DIMM (KMM366S203CTL-G0) backside

  • Product name :  Samsung 16MB SDRAM 16MB PC66
  • Part number : KMM366S203CTL-G0
  • Manufacturer : Samsung Electronics Co., Ltd. (SEC)
  • Country of manufacture : South Korea
  • Build year/week : 1998/09
  • Data Capacity : 16MB
  • Clock speed : 66Mhz (PC66)
  • Features : 168 pin, Unbuffered Non-ECC SDRAM DIMM
  • Data chip composition : [KM48S2020CT-G10] × 8 chips
    (2M × 64bit)
  • One Chip Info
    • KM48S2020CT-G10 (UQK218EM or UQL004DD)
    • Memory IC Type : Synchronous DRAM
    • Capacity : 2M x 8bit
    • Access Time-Max : 7 ns
    • Interleaved Burst Length: 1, 2, 4, 8
    • Clock Frequency-Max (fCLK) : 100 MHz
    • 44 pin
    • Build year/week : 1998/07
  • VDD : 3.3V
  • ETC : 366S203BTL, AD1055-00, SMB2 94V-0
]]> https://www.devicelog.com/memory/dram/sdram/samsung-16mb-sdram-dimm-pc66-kmm366s203ctl-g0/feed/ 0 LG Semicon 16MB SDRAM DIMM PC66 (GMM2642233BLTG-10K 7101S) https://www.devicelog.com/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/ https://www.devicelog.com/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/#respond Fri, 15 Jul 2022 08:54:09 +0000 https://www.devicelog.com/?p=1350 LG Semicon 9703 2Mx64 SDRAM GMM2642233BLTG-10K 7101SLG Semicon 9703 2Mx64 SDRAM 168pin DIMM

  • Product name :  LG SDRAM 16MB PC66
  • Part number : GMM2642233BLTG-10K 7101S
  • Manufacturer : LG Semicon Co., Ltd.
  • Country of manufacture : South Korea
  • Build year/week : 1997/03
  • Data Capacity : 16MB
  • Clock speed : 66Mhz (PC66)
  • Features : 168pin, Unbuffered Non-ECC SDRAM DIMM
  • Data chip composition : [GM72V16821BT10K] × 8 chips
    (2M × 64bit)
  • One Chip Capacity : 2M x 8bit
  • VDD : 3.3V
]]> https://www.devicelog.com/memory/dram/sdram/lg-semicon-16mb-sdram-dimm-pc66-gmm2642233bltg-10k-7101s/feed/ 0 LG Semicon 16MB EDO-DRAM 72pin SIMM (GM71C17400CJ6) https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/ https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/#comments Mon, 11 Jul 2022 15:05:31 +0000 https://www.devicelog.com/?p=1336 LGS GM71C17400CJ6 16MB EDO-DRAM SIMM frontsideLGS GM71C17400CJ6 16MB EDO-DRAM SIMM backside

  • Manufacturer : LG Semicon Co., Ltd.
  • Country of manufacture : South Korea
  • Part Number : ?
  • Form Factor : SIMM
  • Features : 72pin, EDO DRAM, Non-Parity
  • Memory Capacity : 16MB
  • Bandwidth : 32bit
  • Speed : 60ns(tRAC)
  • Voltage : 5V
  • Chip Composition : GM71C17400CJ6 × 8
  • Chip Build Year/Week : 1998/27
  • One Chip Capacity : 4M x 4bit
  • Etc : Addonics®, SD816
]]> https://www.devicelog.com/memory/dram/edo-dram/lg-semicon-16mb-edo-dram-72pin-simm-gm71c17400cj6/feed/ 1 EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6 https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/ https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/#respond Tue, 23 Mar 2021 10:30:05 +0000 https://www.devicelog.com/?p=1311 EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6EK Memory 2GB DDR2 SO-DIMM PC2-5300 CL5 EKM256S74BP8-E6

Product Name EK Memory 2GB DDR SO-DIMM PC2-5300 CL5
Part Number EKM256S74BP8-E6
Manufacturer EK Memory
Country of Manufacture Taiwan
Chip Build Year/Week 2008/27
Memory Module Type DDR2 SO-DIMM 200 pin
Data Capacity 2GB
Clock Speed 667Mhz (PC2-5300)
Memory Timing CL=5, tRCD=5, tRP=5
Features 200pin
Unbuffered
Non-ECC
Notebook(Laptop) Memory
Data Bits x64
Data Chip info EK20908A8A-3EG
20827
XCG248-UA3G
Package FBGA (Fine-pitch BGA)
VDD Voltage 1.8V

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/ek-memory-2gb-ddr2-so-dimm-pc2-5300-cl5-ekm256s74bp8-e6/feed/ 0 Samsung 16GB DDR4 SDRAM UDIMM 2Rx8 PC4-21300 (PC4-2666V-UB1-11) (M378A2K43CB1-CTD) https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/ https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/#comments Wed, 06 Nov 2019 07:38:24 +0000 https://www.devicelog.com/?p=1233 SAMSUNG DDR4 SDRAM 16GB PC4-21300 1906

Product Name Samsung DDR4 SDRAM 16GB 2R×8 PC4-21300
(PC4-2666V-UB1-11)
Part Number M378A2K43CB1-CTD
(C-die)
Manufacturer Samsung Electronics
Country of Manufacture China
Build Year/Week 2019 / 06
DIMM type UDIMM
Data Capacity 16GB
Data Rate
(Max Bandwidth)		 2666.67 MT/s
(21333.33 MB/s)
Memory Timing
(CL – tRCD – tRP – tRAS – tRC)		 19-19-19-43-61
Features 288pin, Unbuffer Non-ECC DDR4 SDRAM DIMM
Data Bits x64
Internal Module Banks 16 Banks (4 Bank Groups)
Ranks 2 (Dual Rank)
Component Composition (1G × 8) × 16
(K4A8G085WC-BCTD) × 16
Package 78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
Height 31.25 mm
VDD Voltage 1.2 V ± 0.06 V
Operating Case Temperature Range Average Refresh Period 7.8us at lower then TCASE 85℃,
3.9us at 85℃ < TCASE ≤ 95℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-16gb-ddr4-sdram-udimm-2rx8-pc4-21300-pc4-2666v-ub1-11-m378a2k43cb1-ctd/feed/ 1 Samsung 8GB DDR4 SDRAM UDIMM 1Rx8 PC4-21300 (PC4-2666V-UA2-11) (M378A1K43CB2-CTD) https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/ https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/#respond Tue, 05 Nov 2019 11:07:57 +0000 https://www.devicelog.com/?p=1215 SAMSUNG DDR4 SDRAM 8GB DIMM (1Rx8_PC4-21300, PC4-2666V-UA2-11, 1828)

Product Name Samsung DDR4 SDRAM 8GB 1R×8 PC4-21300
(PC4-2666V-UA2-11)
Part Number M378A1K43CB2-CTD
(C-die)
Manufacturer Samsung Electronics
Country of Manufacture China
Build Year/Week 2018 / 28
DIMM type UDIMM
Data Capacity 8GB
Data Rate
(Max Bandwidth)		 2666.67 MT/s
(21333.33 MB/s)
Memory Timing
(CL – tRCD – tRP – tRAS – tRC)		 19-19-19-43-61
Features 288pin, Unbuffer Non-ECC DDR4 SDRAM DIMM
Data Bits x64
Internal Module Banks 16 Banks (4 Bank Groups)
Ranks 1 (Single Rank)
Component Composition (1G × 8) × 8
(K4A8G085WC-BCTD) × 8
Package 78FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
Height 30mm
VDD Voltage 1.2V ± 0.06V
Operating Case Temperature Range Average Refresh Period 7.8us at lower then TCASE 85℃,
3.9us at 85℃ < TCASE ≤ 95℃

 

]]> https://www.devicelog.com/memory/dram/ddr4-sdram/samsung-8gb-ddr4-sdram-udimm-1rx8-pc4-21300-pc4-2666v-ua2-11-m378a1k43cb2-ctd/feed/ 0 Samsung 2GB DDR2 SDRAM DIMM 2Rx8 PC2-6400 (M378T5663QZ3-CF7) https://www.devicelog.com/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/ https://www.devicelog.com/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/#respond Sat, 04 Jun 2016 15:17:04 +0000 https://www.devicelog.com/?p=1116 Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)Samsung DDR2 SDRAM 2GB 2Rx8 PC2-6400 (M378T5663QZ3-CF7)

Product Name Samsung DDR2 SDRAM 2GB 2R×8 PC2-6400
Part Number M378T5663QZ3-CF7
Manufacturer Samsung Electronics
Country of Manufacture China
Build Year/Week 2009/04, 2010/07
Memory Module Type DIMM
Data Capacity 2GB
Clock Speed 800Mhz (PC2-6400)
Memory Timing CL=6, tRCD=6, tRP=6
Features 240pin, Unbuffer Non-ECC DDR2 SDRAM DIMM
Data Bits x64
Internal Module Banks 8
Ranks 2
Data Chip Composition
(Depth × Bit organization × pcs)		 128M × 8 × 16pcs
(K4T1G084QQ × 16pcs)
Package 60FBGA with Lead-Free and Halogen-Free
(RoHS compliant)
Height 30mm
VDD Voltage 1.8V ± 0.1V
Operating Case Temperature Range 0°C ~ 95°C

 

]]> https://www.devicelog.com/memory/dram/ddr2-sdram/samsung-2gb-ddr2-sdram-dimm-2rx8-pc2-6400-m378t5663qz3-cf7/feed/ 0 Samsung 8GB PC3-12800 DDR3 SDRAM DIMM (2R×8, M378B1G73QH0-CK0) https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/ https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/#comments Fri, 20 Mar 2015 05:46:58 +0000 https://www.devicelog.com/?p=902 Samsung 8GB DDR3 SDRAM 2R×8 PC3-12800U-11-12-B1 M378B1G73QH0-CK0 1408

Product name Samsung 8GB DDR3 SDRAM PC3-12800 8GB DIMM
(2Rx8, PC3-12800U-11-12-B1, M378B1G73QH0-CK0)
Manufacturer Samsung Electronics
Country of manufacture Philippine
Build year/week 2014/08
Data Capacity 8GB
Clock speed 1600Mhz (PC3-12800)
Memory Timing CL=11, tRCD=11, tRP=11
Features 240pin, Unbuffer Non-ECC DDR3 SDRAM DIMM
Production process technology 20, 30, 40nm
Data bits x64
Internal Module banks 8
Ranks 2
Data chip composition
(Depth × Bit organization × pcs)		 512M×8 × 16 pcs
(K4B4G0846Q-HCK0 × 16 pcs)
Package
78 FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
Height 30mm
VDD voltage 1.5V ± 0.075V
Operating Case Temperature Range 0°C ~ 95°C

 

]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-8gb-ddr3-sdram-pc3-12800u-11-12-b1-2rx8-m378b1g73qh0-ck0/feed/ 4 Samsung 512MB PC2700 DDR SDRAM DIMM (M368L6423DTM) https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/ https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/#respond Tue, 03 Mar 2015 08:45:43 +0000 https://www.devicelog.com/?p=814 The M368L6423DTM is 32M bit x 64 Double Data Rate(DDR) SDRAM high density memory module based on fifth genernation of 256Mb DDR SDRAM respectively. The M368L6423DTM consists of sixteen CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil) packages mounted on a 184pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM. The M368L6423DTM Dual In-line Memory Module and is intended for mounting into 184pin edge connector sockets.

Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM) Samsung DDR SDRAM 256MB PC2700 DIMM (M368L6423DTM)

Product name Samsung DDR SDRAM PC2700 512MB DIMM
(PC2700U-25331B2, M368L6423DTM)
Manufacturer Samsung Electronics
Country of manufacture Korea
Build year/week 2003/12
Data Capacity 512MB
Clock speed 166Mhz (PC2700, DDR333)
Memory Timing CL=2.5
Features 184pin, DIMM, Unbuffer Non-ECC DDR SDRAM
Size 133.35mm × 31.75mm
Data bits 64bit
Internal Module banks 4
Data chip composition K4H560838D-TCB3 × 16
(32M × 8bit × 16chips)
Package TSOP-II
VDD voltage 2.5V ± 0.2V
Operating Case Temperature Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr-sdram/samsung-ddr-sdram-pc2700-512mb-dimm-m368l6423dtm/feed/ 0 Samsung 4GB PC3-10600 DDR3 SDRAM SO-DIMM https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/ https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/#comments Mon, 02 Mar 2015 13:25:48 +0000 https://www.devicelog.com/?p=791 Samsung Electronics released DDR3 SDRAM modules using the 30nm process technology in July 2010. This RAM module was made by the 40nm process technology.

Samsung SODIMM DDR3 PC3-10600 4GB frontside Samsung SODIMM DDR3 PC3-10600 4GB rearside

Product name Samsung DDR3 SDRAM PC3-10600 4GB SO-DIMM
(2Rx8, PC3-10600S-09-10-F2, M471B5273CH0-CH9)
Manufacturer Samsung Electronics (SEC)
Country of manufacture China
Build year/week 2011/13
Data Capacity 4GB
Clock speed 1333Mhz (PC3-10600)
Memory Timing CL=9, tRCD=9, tRP=9
Features 204pin, SODIMM, Unbuffer Non-ECC DDR3 SDRAM
Production process technology 40nm
Data bits x64
Internal Module banks 8
Ranks 2
Data chip composition 256M x 8 * 16 pcs
Component revision 2Gb, C-die
Package 78 ball FBGA
Height 30mm
VDD voltage 1.5V
Operating Case Temperature Range 0°C ~ 85°C
]]> https://www.devicelog.com/memory/dram/ddr3-sdram/samsung-sodimm-ddr3-pc3-10600-4gb-ram/feed/ 3